CPH6337: Power MOSFET, -12V, 70mΩ, -3.5A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
特性- High Speed Switching
- 1.8V drive
- Low On-Resistance
- Pb-Free and RoSH compliance
- Halogen Free compliance : CPH6337-TL-W
| 优势- Reduce dynamic power losses
- Drive at Low Voltage
- Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation
- Environmental Consideration
- Environmental Consideration
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应用 | 终端产品- Modem Card
- Multi Function Printer
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仿真模型 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| CPH6 | 318BD (48.0kB) | O |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| CPH6337-TL-E | Lifetime | Pb-free | CPH-6 | 318BD | 1 | Tape and Reel | 3000 | $0.158 |
| CPH6337-TL-W | Active | Pb-free
Halide free | CPH-6 | 318BD | 1 | Tape and Reel | 3000 | $0.12 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| CPH6337-TL-W | P-Channel | Single | -12 | 10 | -1.4 | -3.5 | 1.6 | 115 | 70 | | 5.6 | | 1.6 | | 405 | 145 | 100 |
