ECH8315: Power MOSFET, -30V, 25mΩ, -7.5A, Single P-Channel

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements.

特性
  • Low On-Resistance
  • ESD Diode-Protected Gate
  • Pb-Free, Halogen Free and RoHS compliance
  • 4.0V drive
优势
  • Improves Efficiency by Reducing Conduction Losses. Reduces Heat Dissipation
  • ESD Resistance
  • Environmental Consideration
应用
  • Load Switch
  • Protection Switch for Lithium-ion Battery
  • Motor Driver
终端产品
  • Digital Still Camera, Wireless speaker
  • Inkjet Printer, Fan Motor , LiB Charger
仿真模型 (1)
Document TitleDocument ID/SizeRevisionRevision Date
ECH8315 SPICE PARAMETERECH8315-SPICE/D (21kB)0Jun, 2014
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SOT-28FL / ECH8318BF (50.5kB)O
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, -30V, 25mOhm, -7.5A, Single P-ChannelECH8315/D (614kB)2Apr, 2015
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
ECH8315-TL-HActive, Not RecPb-free Halide freeSOT-28 FL / ECH-8318BF1Tape and Reel3000$0.236
ECH8315-TL-WActivePb-free Halide freeSOT-28 FL / ECH-8318BF1Tape and Reel3000$0.2
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
ECH8315-TL-WP-ChannelSingle-3020-2.6-7.51.54425184.7875200150
Power MOSFET, -30V, 25mOhm, -7.5A, Single P-Channel (614kB) ECH8315
ECH8315 SPICE PARAMETER ECH8315
SOT-28FL / ECH8 ECH8697R