MBT35200: High Current PNP Bipolar Transistor for Load Management in Portable Applications

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

特性
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
封装
应用注释 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Precision Sub-One Volt 1.7 Ampere Output LDOAND8028/D (38.0kB)0
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable ApplicationsMBT35200MT1/D (109.0kB)5
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TSOP-6318G-02 (64.1kB)V
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
LIB Model for MBT35200MMBT35200MT1.LIB (15.0kB)0
SIN Model for MBT35200MMBT35200MT1.SIN (15.0kB)0
SP2 Model for MBT35200MMBT35200MT1.SP2 (14.0kB)0
SP3 Model for MBT35200MMBT35200MT1.SP3 (14.0kB)0
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MBT35200MT1GActiveAEC Qualified Pb-free Halide freeTSOP-6318G-021Tape and Reel3000$0.1333
SMBT35200MT1GActiveAEC Qualified PPAP Capable Pb-free Halide freeTSOP-6318G-021Tape and Reel3000$0.2045
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
MBT35200MT1GPNPGeneral Purpose0.22351004001000.625
SMBT35200MT1GPNP0.22351004001000.625
High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications (109.0kB) MBT35200
Precision Sub-One Volt 1.7 Ampere Output LDO MBT35200
LIB Model for MBT35200M MBT35200
SIN Model for MBT35200M MBT35200
SP2 Model for MBT35200M MBT35200
SP3 Model for MBT35200M MBT35200
TSOP-6 STF202