MCH6331: Power MOSFET, -30V, 98mΩ, -3.5A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
特性- Low On-Resistance
- 4V drive
- Pb-Free, Halogen Free and RoHS Compliance
- Ultra Small Package MCPH6 (2.0mm x 2.1mm x 0.85mmt)
| 优势- Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation
- Standard Drive Voltage
- Environmental Consideration
- Board Space Saving
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应用 | 终端产品- Note Book
- Car Infotainment
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数据表 (1)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MCH6331-TL-E | Last Shipments | Pb-free | SC-88FL / MCPH-6 | 419AS | 1 | Tape and Reel | 3000 | |
| MCH6331-TL-H | Lifetime | Pb-free
Halide free | SC-88FL / MCPH-6 | 419AS | 1 | Tape and Reel | 3000 | $0.16 |
| MCH6331-TL-W | Active | Pb-free
Halide free | SC-88FL / MCPH-6 | 419AS | 1 | Tape and Reel | 3000 | $0.12 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| MCH6331-TL-W | P-Channel | Single | -30 | 20 | -2.6 | -3.5 | 1.5 | | 171 | 98 | | 5 | 1.2 | | 250 | 65 | 46 |
