This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
特性
| 优势
|
应用
| 终端产品
|
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| Power MOSFET, 35V, 98mOhm, 2.5A, Single N-Channel | MCH6444/D (659kB) | 2 | Jun, 2015 |
| Document Title | Document ID/Size | Revision |
|---|---|---|
| SC 88FL / MCPH6 | 419AS (46.9kB) | O |
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） | ||
|---|---|---|---|---|---|---|---|---|
| MCH6444-TL-H | Lifetime | Pb-free Halide free | SC-88FL / MCPH-6 | 419AS | 1 | Tape and Reel | 3000 | $0.1533 |
| MCH6444-TL-W | Active | Pb-free Halide free | SC-88FL / MCPH-6 | 419AS | 1 | Tape and Reel | 3000 | $0.1067 |
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCH6444-TL-W | N-Channel | Single | 35 | 20 | 2.6 | 2.5 | 0.8 | 166 | 98 | 4 | 0.7 | 186 | 36 | 22 |
