MJE253: 4.0 A, 100 V PNP Bipolar Power Transistor
The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.
特性- High Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) MJE243, MJE253
- High DC Current Gain @ IC = 200 mAdc hFE = 40-200 hFE = 40-120 - MJE243, MJE253
- Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
- High Current Gain Bandwidth Product - fT = 40 MHz (Min) @ IC = 100 mAdc
- Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB
- Pb-Free Packages are Available
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封装
仿真模型 (4)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-225 | 77-09 (32.2kB) | AD |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MJE253G | Active | Pb-free
Halide free | TO-225-3 | 77-09 | NA | Bulk Box | 500 | $0.212 |
| MJE253 | Last Shipments | | TO-225-3 | 77-09 | NA | Bulk Box | 500 | |
订购产品技术参数
| Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| MJE253G | PNP | General Purpose | | 4 | 100 | 40 | 180 | 40 | 15 |
