NSL12AW: High Current PNP Low VCE(sat) Bipolar Transistor
Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
特性- High Current Capability (3 A)
- High Power Handling (Up to 650 mW)
- Low VCE(s) (170 mV Typical @ 1 A)
- Small Size
- Pb-Free Package is Available
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封装
数据表 (1)
仿真模型 (4)
封装图纸 (1)
产品订购型号
产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
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NSL12AWT1G | Active | AEC Qualified
Pb-free
Halide free | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | $0.1467 |
NSL12AWT1 | Last Shipments | | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | |
订购产品技术参数
Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
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NSL12AWT1G | PNP | General Purpose | 0.29 | 2 | 12 | 100 | 300 | - | 0.45 |