NSS20101J: 20 V, 1.0 A NPN Low VCE(sat) Bipolar Transistor

ON Semiconductor e2PowerEdge family of Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

特性
  • These Devices are Pb-Free and are RoHS Compliant
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
应用
  • 20 V, 1.0 A, Low VCE(sat)NPN Transistor
培训教材 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power Saving Alternatives Using Low VCE(sat) BJTs (VoPPT)TND404/D (10341.0kB)0Aug, 2010
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
20 V, 1.0 A, Low VCE(sat) NPN TransistorNSS20101J/D (105.0kB)3
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SC-89, 3 LEAD463C-02 (26.5kB)C
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NSS20101JT1GActiveAEC Qualified Pb-free Halide freeSC-89-3463C-021Tape and Reel3000$0.0533
NSV20101JT1GActiveAEC Qualified PPAP Capable Pb-free Halide freeSC-89-3463C-021Tape and Reel3000$0.5867
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
NSS20101JT1GNPNLow VCE(sat)0.221202005003500.255
NSV20101JT1GNPNLow VCE(sat)0.221202005003500.255
20 V, 1.0 A, Low VCE(sat) NPN Transistor (105.0kB) NSS20101J
Power Saving Alternatives Using Low VCE(sat) BJTs (VoPPT) NSS60601MZ4
SC-89, 3 LEAD NZL7V5AXV3