NSS40200UW6T1G: Low VCE(sat) Transistor, PNP, -40 V, 2.0 A

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

特性
  • High Current, VCE(sat), ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
优势
  • Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion
应用
  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
封装
培训教材 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power Saving Alternatives Using Low VCE(sat) BJTs (VoPPT)TND404/D (10341.0kB)0Aug, 2010
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelNSS40200UW6T1G.LIB (0.0kB)0
Saber ModelNSS40200UW6T1G.SIN (1.0kB)0
Spice2 ModelNSS40200UW6T1G.SP2 (0.0kB)0
Spice3 ModelNSS40200UW6T1G.SP3 (0.0kB)0
应用注释 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Simple Battery Charger using a CCRAND9031/D (199kB)3
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Low VCE(sat) Transistor, PNP, -40 V, 4.0 ANSS40200UW6/D (68kB)2
封装图纸 (1)
Document TitleDocument ID/SizeRevision
WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch506AP (40.0kB)B
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NSS40200UW6T1GActiveAEC Qualified Pb-free Halide freeWDFN-6506AP1Tape and Reel3000联系BDTIC
NSV40200UW6T1GActiveAEC Qualified PPAP Capable Pb-free Halide freeWDFN-6506AP1Tape and Reel3000$0.3009
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
NSS40200UW6T1GPNPLow VCE(sat)0.12240150-1401.5
NSV40200UW6T1GPNPLow VCE(sat)0.12240150-1401.5
Low VCE(sat) Transistor, PNP, -40 V, 4.0 A (68kB) NSS40200UW6T1G
Power Saving Alternatives Using Low VCE(sat) BJTs (VoPPT) NSS60601MZ4
PSpice Model NSS40200UW6T1G
Saber Model NSS40200UW6T1G
Spice2 Model NSS40200UW6T1G
Spice3 Model NSS40200UW6T1G
Simple Battery Charger using a CCR NSR20F30NX
WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch NTLJS4114N