NTD110N02R: Power MOSFET 24V 110A 4.6 mOhm Single N-Channel DPAK
Power MOSFET 24V 110A 4.6 mOhm Single N-Channel DPAK
特性- Planar HD3e Process for Fast Switching Performance
- Body Diode for Low trr and Qrr and Optimized for Synchronous Operation 24 VOLTS
- Low Ciss to Minimize Driver Loss
- Optimized Qgd * RDS(on) for Shoot-Through Protection
- Low Gate Charge
- Pb-Free Packages are Available
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封装
仿真模型 (4)
封装图纸 (2)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTD110N02R-001G | Last Shipments | Pb-free | IPAK-4 | 369D | NA | Tube | 75 | |
| NTD110N02RG | Last Shipments | Pb-free | DPAK-3 | 369AA | 1 | Tube | 75 | |
| NTD110N02RT4G | Active | Pb-free
Halide free | DPAK-3 | 369AA | 1 | Tape and Reel | 2500 | $0.44 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTD110N02RT4G | N-Channel | Single | 24 | 20 | 2 | 110 | 110 | | 6.2 | 4.6 | 23.6 | | 11 | 0.048 | 2710 | 1105 | 450 |
