NTD20N03L27: Power MOSFET 30V 20A 27 mOhm Single N-Channel DPAK Logic Level

This logic level vertical power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery.

特性
  • Ultra-Low RDS(on) , single base, advanced technology
  • SPICE parameters available
  • Diode is characterized for use in bridge circuits
  • IDSS and VDS(on) specified at elevated temperatures
  • High Avalanche Energy Specified
  • ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
  • Pb-Free Packages are Available
应用
  • Power Supplies
  • Inductive Loads
  • PWM Motor Controls
  • Replaces MTD20N03L in many applications
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
P Spice ModelNTD20N03L27.LIB (1.0kB)0
Saber ModelNTD20N03L27.SIN (1.0kB)0
Spice 2 ModelNTD20N03L27.SP2 (1.0kB)0
Spice 3 ModelNTD20N03L27.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DPAK (SINGLE GAUGE) TO-252369C (34.6kB)F
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, 20 A, 30 V, N-Channel DPAKNTD20N03L27/D (95kB)6Sep, 2014
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NTD20N03L27T4GActivePb-free Halide freeDPAK-3369C1Tape and Reel2500$0.3303
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NTD20N03L27T4GN-ChannelSingle3020220742713.80.017100527187
Power MOSFET, 20 A, 30 V, N-Channel DPAK (95kB) NTD20N03L27
P Spice Model NTD20N03L27
Saber Model NTD20N03L27
Spice 2 Model NTD20N03L27
Spice 3 Model NTD20N03L27
DPAK (SINGLE GAUGE) TO-252 NCV8408