NTD4813NH: Power MOSFET 30V 40A 13 mOhm Single N-Channel DPAK

Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK

特性
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • These are Pb-Free Devices
  • Low Rg
应用
  • CPU Power Delivery
  • DC-DC Converters
终端产品
  • High Side Switching
封装
设计和开发工具 (1)
Document TitleDocument ID/SizeRevisionRevision Date
EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T6T8 rev3.5EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T3 AND T6 (4250kB)3.5May, 2015
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, 30 V, 40 A, Single N-Channel, DPAK/IPAKNTD4813NH/D (111kB)4Sep, 2014
应用注释 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Description of the ON Semiconductor MOSFET ModelAND9033CN/D (175.8kB)1
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DPAK 4 LEAD Single Gauge Surface Mount369AA (62.3kB)B
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelNTD4813NH.LIB (1.0kB)0
Saber ModelNTD4813NH.SIN (1.0kB)0
Spice2 ModelNTD4813.NH.SP2 (1.0kB)0
Spice3 ModelNTD4813NH.SP3 (1.0kB)0
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NTD4813NHT4GActivePb-free Halide freeDPAK-3369AA1Tape and Reel2500$0.1733
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NTD4813NHT4GN-ChannelSingle30202.54035.325.9137.118.237940201115
Power MOSFET, 30 V, 40 A, Single N-Channel, DPAK/IPAK (111kB) NTD4813NH
EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T6T8 rev3.5 NVD4804N
Description of the ON Semiconductor MOSFET Model NVD4804N
PSpice Model NTD4813NH
Saber Model NTD4813NH
Spice2 Model NTD4813NH
Spice3 Model NTD4813NH
DPAK 4 LEAD Single Gauge Surface Mount NVD6824NL