NTDV5804N: Power MOSFET 40V, 69A, 8.5 mOhm, Single N-Channel, DPAK.

Automotive Power MOSFET. 40V, 69A, 8.5 mOhm, Single N-Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

特性
  • Low RDS(on)
  • High Current Capability
  • Avalanche Energy Specified
  • Pb-Free
  • Class D Amplifier
应用
  • CCFL Backlight
  • DC Motor Control
  • Power Supply Secondary Side Synchronous Rectification
应用注释 (1)
Document TitleDocument ID/SizeRevisionRevision Date
MOSFET Gate-Charge Origin and its ApplicationsAND9083/D (193kB)2Feb, 2016
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, 40 V, 69 A, Single N-Channel, DPAK/IPAKNTD5804N/D (73kB)11Nov, 2016
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelNTD5804NT4G.LIB (2.0kB)0
Saber ModelNTD5804NT4G.SIN (2.0kB)0
Spice2 ModelNTD5804NT4G.SP2 (2.0kB)0
Spice3 ModelNTD5804NT4G.SP3 (2.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DPAK 4 LEAD Single Gauge Surface Mount369AA (62.3kB)B
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NTDV5804NT4GActiveAEC Qualified PPAP Capable Pb-free Halide freeDPAK-3369AA1Tape and Reel2500$0.4248
STDV5804NT4GActiveAEC Qualified PPAP Capable Pb-free Halide freeDPAK-3369AA1Tape and Reel2500$0.4248
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NTDV5804NT4GN-ChannelSingle40203.56971127.54511.82460310215
STDV5804NT4G
Power MOSFET, 40 V, 69 A, Single N-Channel, DPAK/IPAK (73kB) NTDV5804N
MOSFET Gate-Charge Origin and its Applications NVD5805N
PSpice Model NTDV5804N
Saber Model NTDV5804N
Spice2 Model NTDV5804N
Spice3 Model NTDV5804N
DPAK 4 LEAD Single Gauge Surface Mount NVD6824NL