NTHS4166N: Power MOSFET 30V 8.2A 24 mOhm Single N-Channel ChipFET

Power MOSFET 30V, 8.2A, Single N-Channel

特性
  • Leading Edge Trench Technology for Low RDS(on)
  • Reduced Qg
  • Low Leakage Current
优势
  • System Efficiency Improvement
  • Switching Response Improvement
  • System Efficiency Improvement
应用
  • DC-DC Conversion
  • Load/Power Switch
  • Battery Management
终端产品
  • Notebook PC, Printer, Cell Phone, PMP, DSC, GPS, Portable Games
封装
应用注释 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Single-Channel 1206A ChipFET™ Power MOSFET Recommended Pad Pattern and Thermal PerformanceAND8044/D (39.0kB)0
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
NTHS4166NNTHS4166N/D (84.0kB)0
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelNTHS4166N.LIB (1.0kB)0
SPICE2 ModelNTHS4166N.SP2 (1.0kB)0
SPICE3 ModelNTHS4166N.SP3 (1.0kB)0
Saber ModelNTHS4166N.SIN (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
ChipFET1206A-03 (71.4kB)K
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NTHS4166NT1GActivePb-free Halide freeChipFET-81206A-031Tape and Reel3000$0.1453
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NTHS4166NT1GN-ChannelSingle30202.38.22.227229.2183.846900210140
NTHS4166N (84.0kB) NTHS4166N
Single-Channel 1206A ChipFET™ Power MOSFET Recommended Pad Pattern and Thermal Performance NTHS5443
PSpice Model NTHS4166N
SPICE2 Model NTHS4166N
SPICE3 Model NTHS4166N
Saber Model NTHS4166N
ChipFET NTHS5443