NTJD4152P: Small Signal MOSFET -20V -0.88A 260 mOhm Dual P-Channel SC88 with ESD Protection _ BDTIC 中国领先电子元器件代理商

NTJD4152P: Small Signal MOSFET -20V -0.88A 260 mOhm Dual P-Channel SC88 with ESD Protection

Small Signal MOSFET -20V -0.88A 260 mOhm Dual P-Channel SC88 with ESD Protection

特性

Leading Trench Technology for Low RDS(on) Performance
Small Footprint Package (SC70-6 Equivalent)
ESD Protected Gate
Pb-Free Package is Available

应用

Load/Power Management
Charging Circuits
Load Switching
Cell Phones, Computing, Digital Cameras, MP3s, and PDAs

封装

NTJD4152P 封装

仿真模型 (4)

Document Title	Document ID/Size	Revision	Revision Date
P Spice Model	NTJD4152P.LIB (1.0kB)	0
Saber Model	NTJD4152P.SIN (1.0kB)	0
Spice 2 Model	NTJD4152P.SP2 (1.0kB)	0
Spice 3 Model	NTJD4152P.SP3 (1.0kB)	0

封装图纸 (1)

Document Title	Document ID/Size	Revision
SC-88/SC70-6/SOT-363 6 LEAD	419B-02 (62.3kB)	Y

数据表 (1)

Document Title	Document ID/Size	Revision	Revision Date
Small Signal MOSFET, 20 V, 0.88 A, Dual P-Channel, with ESD Protection	NTJD4152P/D (70kB)	6

产品订购型号

产品	状况	Compliance	封装		MSL*	容器		预算价格 (1千个数量的单价）
NTJD4152PT1G	Active	Pb-free Halide free	SC-88-6 / SC-70-6 / SOT-363-6	419B-02	1	Tape and Reel	3000	$0.0907

订购产品技术参数

Product	Channel Polarity	Configuration	V(BR)DSS Min (V)	VGS Max (V)	VGS(th) Max (V)	ID Max (A)	PD Max (W)	RDS(on) Max @ VGS = 2.5 V (mΩ)	RDS(on) Max @ VGS = 4.5 V (mΩ)	RDS(on) Max @ VGS = 10 V (mΩ)	Qg Typ @ VGS = 4.5 V (nC)	Qg Typ @ VGS = 10 V (nC)	Qgd Typ @ VGS = 4.5 V (nC)	Qrr Typ (nC)	Ciss Typ (pF)	Coss Typ (pF)	Crss Typ (pF)
NTJD4152PT1G	P-Channel	Dual	20	12	1.2	0.88	0.272	500	260		2.2		0.65		155	25	18

Small Signal MOSFET, 20 V, 0.88 A, Dual P-Channel, with ESD Protection (70kB) NVJD4152P

P Spice Model NVJD4152P

Saber Model NVJD4152P

Spice 2 Model NVJD4152P

Spice 3 Model NVJD4152P

SC-88/SC70-6/SOT-363 6 LEAD NUF2221

©1993 - 2024 BDTIC