NTLJD3115P: Power MOSFET -20V -3.3A 100 mOhm Dual P-Channel WDFN6
Power MOSFET -20 V, -4.1 A, µCool™ Dual P-Channel, 2x2 mm WDFN Package
特性- WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction
- 2x2 mm Footprint Same as SC-88
- Lowest RDS(on) Solution in 2x2 mm Package
- 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level
- Bidirectional Current Flow with Common Source Configuration
- This is a Pb-Free Device
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应用- Optimized for Battery and Load Management Applications in Portable Equipment
- Li-Ion Battery Charging and Protection Circuits
- High Side Load Switch
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封装
应用注释 (2)
数据表 (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| Power MOSFET | NTLJD3115P/D (153kB) | 7 | Aug, 2016 |
仿真模型 (4)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTLJD3115PT1G | Active | Pb-free
Halide free | WDFN-6 | 506AN | 1 | Tape and Reel | 3000 | $0.2 |
| NTLJD3115PTAG | Last Shipments | Pb-free
Halide free | WDFN-6 | 506AN | 1 | Tape and Reel | 3000 | |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTLJD3115PT1G | P-Channel | Dual | 20 | 8 | 1 | 4.1 | 2.3 | 135 | 100 | | 5.5 | | 1.4 | 5 | 531 | 91 | 56 |
