NTMS4177P: Power MOSFET -30V -11.4A 19 mOhm Single P-Channel SO-8
This is a 30 V P-Channel Power MOSFET.
特性- Low RDS(on)
- Low Capacitance
- Optimized Gate Charge
- SOIC-8 Surface Mount Package
- This is a Pb-Free Device
| 优势- Minimize Conduction Losses
- Minimize Driver Losses
- Minimize Switching Losses
- Saves Board Space
|
封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTMS4177PR2G | Active | Pb-free
Halide free | SOIC-8 | 751-07 | 1 | Tape and Reel | 2500 | $0.2533 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTMS4177PR2G | P-Channel | Single | 30 | 20 | 2.5 | 11.4 | 2.5 | | 19 | 12 | 29 | 55 | 13 | 30 | 3100 | 550 | 370 |
