NTMS4802N: Power MOSFET 30V 18A 4 mOhm Single N-Channel SO-8
Power MOSFET 30V 18A 4 mOhm Single N-Channel SO-8
特性- Low RDS(on)/sub> to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- This is a PbFree Device
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应用- DCDC Converters
- Synchronous MOSFET
- Printers
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封装
设计和开发工具 (1)
数据表 (1)
应用注释 (1)
封装图纸 (1)
仿真模型 (4)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTMS4802NR2G | Active | Pb-free
Halide free | SOIC-8 | 751-07 | 1 | Tape and Reel | 2500 | $0.44 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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| NTMS4802NR2G | N-Channel | Single | 30 | 20 | 2.5 | 18 | 2.5 | | 5.5 | 4 | 36 | 75 | 13 | 40 | 5300 | 880 | 460 |
