NTMS5P02: Power MOSFET -20V -5.4A 33 mOhm Single P-Channel SO-8 _ BDTIC 中国领先电子元器件代理商

NTMS5P02: Power MOSFET -20V -5.4A 33 mOhm Single P-Channel SO-8

This is a 20 V P-Channel Power MOSFET.

特性

High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency
Miniature SO-8 Surface Mount Package--Saves Board Space
Diode Exhibits High Speed with Soft Recovery
IDSS Specified at Elevated Temperature
Drain-to-Source Avalanche Energy Specified
Mounting Information for the SO-8 Package is Provided
Pb-Free Packages are Available

应用

Power Management in Portable and Battery-Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones

封装

NTMS5P02 封装

仿真模型 (4)

Document Title	Document ID/Size	Revision	Revision Date
P Spice Model	NTMS5P02.LIB (1.0kB)	0
Saber Model	NTMS5P02.SIN (1.0kB)	0
Spice 2 Model	NTMS5P02.SP2 (1.0kB)	0
Spice 3 Model	NTMS5P02.SP3 (1.0kB)	0

封装图纸 (1)

Document Title	Document ID/Size	Revision
SOIC-8 Narrow Body	751-07 (62.6kB)	AK

数据表 (1)

Document Title	Document ID/Size	Revision	Revision Date
Power MOSFET -20 V, -5.4 A, Single P-Channel SO-8	NTMS5P02R2/D (118.0kB)	3

产品订购型号

产品	状况	Compliance	封装		MSL*	容器		预算价格 (1千个数量的单价）
NTMS5P02R2G	Active	Pb-free Halide free	SOIC-8	751-07	1	Tape and Reel	2500	$0.24
NTMS5P02R2	Obsolete		SOIC-8	751-07	1	Tape and Reel	2500

订购产品技术参数

Product	Channel Polarity	Configuration	V(BR)DSS Min (V)	VGS Max (V)	VGS(th) Max (V)	ID Max (A)	PD Max (W)	RDS(on) Max @ VGS = 2.5 V (mΩ)	RDS(on) Max @ VGS = 4.5 V (mΩ)	RDS(on) Max @ VGS = 10 V (mΩ)	Qg Typ @ VGS = 4.5 V (nC)	Qg Typ @ VGS = 10 V (nC)	Qgd Typ @ VGS = 4.5 V (nC)	Qrr Typ (nC)	Ciss Typ (pF)	Coss Typ (pF)	Crss Typ (pF)
NTMS5P02R2G	P-Channel	Single	20	10	1.25	5.4	7.05	48	33		20		7	0.03	1375	510	200

Power MOSFET -20 V, -5.4 A, Single P-Channel SO-8 (118.0kB) NVMS5P02

P Spice Model NVMS5P02

Saber Model NVMS5P02

Spice 2 Model NVMS5P02

Spice 3 Model NVMS5P02

SOIC-8 Narrow Body CM1216

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