NTR2101P: Small Signal MOSFET -8V -3.7A 52 mOhm Single P-Channel SOT-23
This is an 8.0 V P-Channel Power MOSFET.
特性- Leading Trench Technology for Low RDS(on)
- -1.8 V Rated for Low Voltage Gate Drive
- SOT-23 Surface Mount for Small Footprint (3x3mm)
- Pb-Free Package is Available
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应用- High Side Load Switch
- DC-DC Conversion
- Cell Phone, Notebook, PDAs, ect.
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封装
仿真模型 (4)
封装图纸 (1)
Document Title | Document ID/Size | Revision |
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SOT-23 | 318-08 (33.4kB) | AR |
数据表 (1)
产品订购型号
产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
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NTR2101PT1G | Active | Pb-free
Halide free | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | $0.1191 |
订购产品技术参数
Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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NTR2101PT1G | P-Channel | Single | 8 | 8 | 1 | 3.7 | 0.96 | 72 | 52 | | 12 | | 2.5 | | 1173 | 289 | 218 |