NVD5802N: Power MOSFET 40V, 101A, 4.4 mOhm, Single N-Channel, DPAK. _ BDTIC 中国领先电子元器件代理商

NVD5802N: Power MOSFET 40V, 101A, 4.4 mOhm, Single N-Channel, DPAK.

Automotive Power MOSFET. 40V, 101A, 4.4 mOhm, Single N-Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

特性

Low RDS(on)
Low Capacitance
Optimized Gate Charge
MSL 1/260C
AEC Q101 Qualified
100% Avalanche Tested
PbFree Devices
DCDC Converters
Motor Driver

优势

Minimize Conduction Losses
Minimizes Driver Losses
Minimizes Switching Losses

应用

CPU Power Delivery

封装

NVD5802N 封装

应用注释 (1)

Document Title	Document ID/Size	Revision	Revision Date
MOSFET Gate-Charge Origin and its Applications	AND9083/D (193kB)	2	Feb, 2016

数据表 (1)

Document Title	Document ID/Size	Revision	Revision Date
Power MOSFET, 40 V, Single N-Channel, 101 A DPAK	NTD5802N/D (101kB)	7	Aug, 2014

仿真模型 (4)

Document Title	Document ID/Size	Revision	Revision Date
PSpice Model	NTD5802NT4G.LIB (2.0kB)	0
Saber Model	NTD5802NT4G.SIN (2.0kB)	0
Spice2 Model	NTD5802NT4G.SP2 (2.0kB)	0
Spice3 Model	NTD5802NT4G.SP3 (2.0kB)	0

封装图纸 (1)

Document Title	Document ID/Size	Revision
DPAK (SINGLE GAUGE) TO-252	369C (34.6kB)	F

产品订购型号

产品	状况	Compliance	封装		MSL*	容器		预算价格 (1千个数量的单价）
NVD5802NT4G	Active	AEC Qualified PPAP Capable Pb-free Halide free	DPAK-3	369C	1	Tape and Reel	2500	$0.5874

订购产品技术参数

Product	Channel Polarity	Configuration	V(BR)DSS Min (V)	VGS Max (V)	VGS(th) Max (V)	ID Max (A)	PD Max (W)	RDS(on) Max @ VGS = 2.5 V (mΩ)	RDS(on) Max @ VGS = 4.5 V (mΩ)	RDS(on) Max @ VGS = 10 V (mΩ)	Qg Typ @ VGS = 4.5 V (nC)	Qg Typ @ VGS = 10 V (nC)	Qgd Typ @ VGS = 4.5 V (nC)	Qrr Typ (nC)	Ciss Typ (pF)	Coss Typ (pF)	Crss Typ (pF)
NVD5802NT4G	N-Channel	Single	40	20	3.5	101	93.75		7.8	4.4		75	15	15	5300	850	550

Power MOSFET, 40 V, Single N-Channel, 101 A DPAK (101kB) NVD5802N

MOSFET Gate-Charge Origin and its Applications NVD5805N

PSpice Model NVD5802N

Saber Model NVD5802N

Spice2 Model NVD5802N

Spice3 Model NVD5802N

DPAK (SINGLE GAUGE) TO-252 NCV8408

©1993 - 2024 BDTIC