NVJD4401N: Small Signal MOSFET 20V 630mA 375 mOhm Dual N-Channel Logic Level with ESD Protection
Automotive Power MOSFET. This N-Channel dual device was designed with a small footprint package (2x2 mm) with ON Semiconductor's leading planar process for small footprint and increased efficiency. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性- Small Footprint (2 x 2 mm)
- Low Gate Charge N-Channel Device
- ESD Protected Gate
- Same Package as SC-70 (6 Leads)
- Pb-Free Packages are Available
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应用- Load Power Switching
- Li-Ion Battery Supplied Devices
- Cell Phones, Media Players, Digital Cameras, PDAs
- DC-DC Conversion
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NVJD4401NT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | $0.1416 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NVJD4401NT1G | N-Channel | Dual | 20 | 12 | 1.5 | 0.63 | 0.27 | 360 | 290 | | 1.3 | | 0.4 | | 33 | 13 | 2.8 |
