NVTFS5811NL: Power MOSFET 40V, 40A, 6.7 mOhm, Single N-Channel, u8FL, Logic Level.
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性- Low on resistance
- High current capability
- 100% avalanche tested
| 优势- Minimal conduction losses
- Robust load performance
- Safeguards agains voltage overstress failures
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封装
应用注释 (1)
数据表 (1)
仿真模型 (4)
封装图纸 (1)
产品订购型号
产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
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NVTFS5811NLTAG | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | u8FL / WDFN-8 | 511AB | 1 | Tape and Reel | 1500 | $0.3564 |
NVTFS5811NLTWG | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | u8FL / WDFN-8 | 511AB | 1 | Tape and Reel | 5000 | $0.3564 |
NVTFS5811NLWFTAG | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | u8FL / WDFN-8 | 511AB | 1 | Tape and Reel | 1500 | $0.3776 |
NVTFS5811NLWFTWG | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | u8FL / WDFN-8 | 511AB | 1 | Tape and Reel | 5000 | $0.3776 |
订购产品技术参数
Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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NVTFS5811NLTAG | N-Channel | Single | 40 | 20 | 2.2 | 40 | 21 | | 10 | 6.7 | 17 | 30 | 9 | 17 | 1570 | 215 | 157 |
NVTFS5811NLTWG | N-Channel | Single | 40 | 20 | 2.2 | 40 | 21 | | 10 | 6.7 | 17 | 30 | 9 | 17 | 1570 | 215 | 157 |
NVTFS5811NLWFTAG | N-Channel | Single | 40 | 20 | 2.2 | 40 | 21 | | 10 | 6.7 | 17 | 30 | 9 | 17 | 1570 | 215 | 157 |
NVTFS5811NLWFTWG | N-Channel | Single | 40 | 20 | 2.2 | 40 | 21 | | 10 | 6.7 | 17 | 30 | 9 | 17 | 1570 | 215 | 157 |