SFT1341: Power MOSFET, -40 V, 112 mΩ, -10 A, Single P-Channel
This P-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance.
This devices is suitable for applications with low gate charge driving or low on resistance requirements.
特性- Low ON resistance
- Low gate charge
- Fast switching
- ESD Diode - Protected Gate
- Pb-Free and RoHS Compliance
| 优势- Improves efficiency by reducing conduction losses.
- Ease of drive, faster turn-on
- Reduces dynamic power losses
- ESD resistance
- Environment friendliness
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仿真模型 (1)
封装图纸 (2)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| SFT1341-E | Lifetime | Pb-free | IPAK / TP | 369AJ | NA | Bulk Bag | 500 | |
| SFT1341-TL-E | Lifetime | Pb-free | DPAK / TP-FA | 369AH | 1 | Tape and Reel | 700 | |
| SFT1341-TL-W | Active | Pb-free
Halide free | DPAK / TP-FA | 369AH | 1 | Tape and Reel | 700 | $0.2667 |
| SFT1341-W | Active | Pb-free
Halide free | IPAK / TP | 369AJ | NA | Bulk Bag | 500 | $0.2667 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| SFT1341-TL-W | P-Channel | Single | -40 | 10 | -1.4 | -10 | 15 | 154 | 112 | | 8 | | 2.5 | | 650 | 65 | 50 |
| SFT1341-W | P-Channel | Single | -40 | 10 | -1.4 | -10 | 15 | 154 | 112 | | 8 | | 2.5 | | 650 | 65 | 50 |
