SN74CBT16211C 具有 -2V 下冲保护的 24 位 FET 总线开关
The SN74CBT16211C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT16211C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.
The SN74CBT16211C is organized as two 12-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. When OE\ is low, the associated 12-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 12-bit bus switch is OFF, and the high-impedance state exists between the A and B ports
|
SN74CBT16211C |
| Voltage Nodes(V) |
5 |
| Vcc range(V) |
4.0 to 5.5 |
| No. of Bits |
24 |
| Input Level |
TTL |
| ron(max)(ohms) |
12 |
| Static Current |
0.003 |
| tpd max(ns) |
0.25 |
| Rating |
Catalog |
| Technology Family |
CBT-C |
SN74CBT16211C 特性
- Member of the Texas Instruments Widebus™ Family
- Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
- Bidirectional Data Flow, With Near-Zero Propagation Delay
- Low ON-State Resistance (ron) Characteristics (ron = 3
Typical)
- Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC = 3 µA Max)
- VCC Operating Range From 4 V to 5.5 V
- Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
- Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Supports Both Digital and Analog Applications: PCI Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
SN74CBT16211C 芯片订购指南
| 器件 |
状态 |
温度 |
价格 |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
| 74CBT16211CDGGRE4 |
ACTIVE |
-40 to 85 |
0.99 | 1ku |
TSSOP (DGG) | 56 |
2000 | LARGE T&R |
|
| 74CBT16211CDGGRG4 |
ACTIVE |
-40 to 85 |
0.99 | 1ku |
TSSOP (DGG) | 56 |
2000 | LARGE T&R |
|
| 74CBT16211CDGVRE4 |
ACTIVE |
-40 to 85 |
0.99 | 1ku |
TVSOP (DGV) | 56 |
2000 | LARGE T&R |
|
| 74CBT16211CDGVRG4 |
ACTIVE |
-40 to 85 |
0.99 | 1ku |
TVSOP (DGV) | 56 |
2000 | LARGE T&R |
|
| SN74CBT16211CDGGR |
ACTIVE |
-40 to 85 |
0.99 | 1ku |
TSSOP (DGG) | 56 |
2000 | LARGE T&R |
|
| SN74CBT16211CDGVR |
ACTIVE |
-40 to 85 |
0.99 | 1ku |
TVSOP (DGV) | 56 |
2000 | LARGE T&R |
|
| SN74CBT16211CDL |
ACTIVE |
-40 to 85 |
1.30 | 1ku |
SSOP (DL) | 56 |
20 | TUBE |
|
| SN74CBT16211CDLG4 |
ACTIVE |
-40 to 85 |
1.30 | 1ku |
SSOP (DL) | 56 |
20 | TUBE |
|
| SN74CBT16211CDLR |
ACTIVE |
-40 to 85 |
1.10 | 1ku |
SSOP (DL) | 56 |
1000 | LARGE T&R |
|
| SN74CBT16211CDLRG4 |
ACTIVE |
-40 to 85 |
1.10 | 1ku |
SSOP (DL) | 56 |
1000 | LARGE T&R |
|
SN74CBT16211C 质量与无铅数据
| 器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
| 74CBT16211CDGGRE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
74CBT16211CDGGRE4 |
74CBT16211CDGGRE4 |
| 74CBT16211CDGGRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
74CBT16211CDGGRG4 |
74CBT16211CDGGRG4 |
| 74CBT16211CDGVRE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
74CBT16211CDGVRE4 |
74CBT16211CDGVRE4 |
| 74CBT16211CDGVRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
74CBT16211CDGVRG4 |
74CBT16211CDGVRG4 |
| SN74CBT16211CDGGR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
SN74CBT16211CDGGR |
SN74CBT16211CDGGR |
| SN74CBT16211CDGVR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
SN74CBT16211CDGVR |
SN74CBT16211CDGVR |
| SN74CBT16211CDL |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
SN74CBT16211CDL |
SN74CBT16211CDL |
| SN74CBT16211CDLG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
SN74CBT16211CDLG4 |
SN74CBT16211CDLG4 |
| SN74CBT16211CDLR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
SN74CBT16211CDLR |
SN74CBT16211CDLR |
| SN74CBT16211CDLRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
SN74CBT16211CDLRG4 |
SN74CBT16211CDLRG4 |
SN74CBT16211C 应用技术支持与电子电路设计开发资源下载
- SN74CBT16211C 数据资料 dataSheet 下载.PDF
- TI 德州仪器信号开关产品选型与价格 . xls
- Logic Guide 2009 (PDF 4263 KB)
- 防止模拟开关的额外功耗 (PDF 392 KB) (PDF 1305 KB)
- Understanding and Interpreting Standard-Logic Data Sheets (PDF 857 KB)
- TI IBIS File Creation, Validation, and Distribution Processes (PDF 380 KB)
- Implications of Slow or Floating CMOS Inputs (PDF 101 KB)
- CMOS Power Consumption and CPD Calculation (PDF 89 KB)
- Designing With Logic (PDF 186 KB)
- Live Insertion (PDF 150 KB)
- Input and Output Characteristics of Digital Integrated Circuits (PDF 1708 KB)
- Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc (PDF 43 KB)
- HiRel Unitrode Power Management Brochure (PDF 206 KB)
- LOGIC Pocket Data Book (PDF 6001 KB)
- HiRel Unitrode Power Management Brochure (PDF 206 KB)
- Logic Cross-Reference (PDF 2938 KB)
