SN65LVDS2 单路 LVDS 发送器
The SN65LVDS1, SN65LVDS2, and SN65LVDT2 are single, low-voltage, differential line drivers and receivers in the small-outline transistor package. The outputs comply with the TIA/EIA-644A standard and provide a minimum differential output voltage magnitude of 247 mV into a 100-Ω load at signaling rates up to 630 Mbps for drivers and 400 Mbps for receivers.
When the SN65LVDS1 is used with an LVDS receiver (such as the SN65LVDT2) in a point-to-point connection, data or clocking signals can be transmitted over printed-circuit-board traces or cables at very high rates with very low electromagnetic emissions and power consumption. The packaging, low power, low EMI, high ESD tolerance, and wide supply voltage range make the device ideal for battery-powered applications
SN65LVDS1
SN65LVDS2
SN65LVDT2
Input Signal
LVTTL
LVDS
LVDS
Output Signal
LVDS
LVTTL
LVTTL
No. of Rx
1
1
No. of Tx
1
Signaling Rate(Mbps)
630
400
400
Supply Voltage(s)(V)
3.3
3.3
3.3
ICC(Max)(mA)
7
8
7
Rx tpd(Typ)(ns)
2.6
2.6
Tx tpd(Typ)(ns)
1.7
Pin/Package
5SOT-23, 8SOIC
5SOT-23, 8SOIC
5SOT-23, 8SOIC
Operating Temperature Range(°C)
-40 to 85
-40 to 85
-40 to 85
ESD HBM(kV)
9
9
15
Approx. Price (US$)
0.50 | 1ku
0.50 | 1ku
0.65 | 1ku
SN65LVDS2 特性
Meets or Exceeds the ANSI TIA/EIA-644A Standard
Designed for Signaling Rates(1)
up to:
630 Mbps Drivers
400 Mbps Receivers
Operates From a 2.4-V to 3.6-V Supply
Available in SOT-23 and SOIC Packages
Bus-Terminal ESD Exceeds 9 kV
Low-Voltage Differential Signaling With Typical Output Voltages of 350 mV Into a 100-Ω Load
Propagation Delay Times
1.7 ns Typical Driver
2.5 ns Typical Receiver
Power Dissipation at 200 MHz
25 mW Typical Driver
60 mW Typical Receiver
LVDT Receiver Includes Line Termination
Low Voltage TTL (LVTTL) Level Driver Input Is 5-V Tolerant
Driver Is Output High Impedance With
VCC < 1.5 V
Receiver Output and Inputs Are High Impedance With VCC < 1.5 V
Receiver Open-Circuit Fail Safe
Differential Input Voltage Threshold Less Than 100 mV
SN65LVDS2 芯片订购指南
器件
状态
温度
价格
封装 | 引脚
封装数量 | 封装载体
丝印标记
SN65LVDS2D
ACTIVE
-40 to 85
0.60 | 1ku
SOIC (D) | 8
75 | TUBE
SN65LVDS2DBVR
ACTIVE
-40 to 85
0.50 | 1ku
SOT-23 (DBV) | 5
3000 | LARGE T&R
SN65LVDS2DBVRG4
ACTIVE
-40 to 85
0.50 | 1ku
SOT-23 (DBV) | 5
3000 | LARGE T&R
SN65LVDS2DBVT
ACTIVE
-40 to 85
0.60 | 1ku
SOT-23 (DBV) | 5
250 | SMALL T&R
SN65LVDS2DBVTG4
ACTIVE
-40 to 85
0.60 | 1ku
SOT-23 (DBV) | 5
250 | SMALL T&R
SN65LVDS2DG4
ACTIVE
-40 to 85
0.60 | 1ku
SOIC (D) | 8
75 | TUBE
SN65LVDS2DR
ACTIVE
-40 to 85
0.50 | 1ku
SOIC (D) | 8
2500 | LARGE T&R
SN65LVDS2DRG4
ACTIVE
-40 to 85
0.50 | 1ku
SOIC (D) | 8
2500 | LARGE T&R
SN65LVDS2 质量与无铅数据
器件
环保计划*
铅/焊球涂层
MSL 等级/回流焊峰
环保信息与无铅 (Pb-free)
DPPM / MTBF / FIT 率
SN65LVDS2D
Green (RoHS & no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65LVDS2D
SN65LVDS2D
SN65LVDS2DBVR
Green (RoHS & no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65LVDS2DBVR
SN65LVDS2DBVR
SN65LVDS2DBVRG4
Green (RoHS & no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65LVDS2DBVRG4
SN65LVDS2DBVRG4
SN65LVDS2DBVT
Green (RoHS & no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65LVDS2DBVT
SN65LVDS2DBVT
SN65LVDS2DBVTG4
Green (RoHS & no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65LVDS2DBVTG4
SN65LVDS2DBVTG4
SN65LVDS2DG4
Green (RoHS & no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65LVDS2DG4
SN65LVDS2DG4
SN65LVDS2DR
Green (RoHS & no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65LVDS2DR
SN65LVDS2DR
SN65LVDS2DRG4
Green (RoHS & no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65LVDS2DRG4
SN65LVDS2DRG4
SN65LVDS2 应用技术支持与电子电路设计开发资源下载
SN65LVDS2 数据资料 dataSheet 下载 .PDF
TI 德州仪器LVDS PHYs选型与价格 . xls
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1Q 2011 Issue Analog Applications Journal (slyt399.PDF, 964 KB)
接口选择指南 (Rev. D) (PDF 2994 KB)
Signaling Rate vs. Distance for Differential Buffers (PDF 420 KB)
Q1 2009 Issue Analog Applications Journal (slyt319.PDF, 1.39 MB)
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无铅组件涂层的保存期评估 (PDF 1305 KB)
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