The TLC27L2 and TLC27L7 dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, extremely low power, and high gain.
These devices use Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, and low power consumption make these cost-effective devices ideal for high gain, low frequency, low power applications. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27L2 (10 mV) to the high-precision TLC27L7 (500 µV).
TLC27L2B | |
Number of Channels | 2 |
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) | 3 |
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) | 16 |
Iq per channel(Max)(mA) | 0.017 |
GBW(Typ)(MHz) | 0.085 |
Slew Rate(Typ)(V/us) | 0.03 |
VIO (25 deg C)(Max)(mV) | 2 |
Offset Drift(Typ)(uV/C) | 1.1 |
IIB(Max)(pA) | 60 |
CMRR(Min)(dB) | 65 |
Vn at 1kHz(Typ)(nV/rtHz) | 68 |
Rating | Catalog |
Pin/Package | 8PDIP, 8SOIC |
Approx. Price (US$) | 0.40 | 1ku |
Operating Temperature Range(C) | -40 to 85,0 to 70 |
器件 | 状态 | 温度 | 价格(美元) | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
TLC27L2BCD | ACTIVE | 0 to 70 | 0.45 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
TLC27L2BCDG4 | ACTIVE | 0 to 70 | 0.45 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
TLC27L2BCDR | ACTIVE | 0 to 70 | 0.37 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
TLC27L2BCDRG4 | ACTIVE | 0 to 70 | 0.37 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
TLC27L2BCP | ACTIVE | 0 to 70 | 0.37 | 1ku | PDIP (P) | 8 | 50 | TUBE | |
TLC27L2BCPE4 | ACTIVE | 0 to 70 | 0.37 | 1ku | PDIP (P) | 8 | 50 | TUBE | |
TLC27L2BID | ACTIVE | -40 to 85 | 0.47 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
TLC27L2BIDG4 | ACTIVE | -40 to 85 | 0.47 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
TLC27L2BIDR | ACTIVE | -40 to 85 | 0.39 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
TLC27L2BIDRG4 | ACTIVE | -40 to 85 | 0.39 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
TLC27L2BIP | ACTIVE | -40 to 85 | 0.39 | 1ku | PDIP (P) | 8 | 50 | TUBE | |
TLC27L2BIPE4 | ACTIVE | 0 to 70 | 0.39 | 1ku | PDIP (P) | 8 | 50 | TUBE |
器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
TLC27L2BCD | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2BCD | TLC27L2BCD |
TLC27L2BCDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2BCDG4 | TLC27L2BCDG4 |
TLC27L2BCDR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2BCDR | TLC27L2BCDR |
TLC27L2BCDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2BCDRG4 | TLC27L2BCDRG4 |
TLC27L2BCP | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC27L2BCP | TLC27L2BCP |
TLC27L2BCPE4 | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC27L2BCPE4 | TLC27L2BCPE4 |
TLC27L2BID | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2BID | TLC27L2BID |
TLC27L2BIDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2BIDG4 | TLC27L2BIDG4 |
TLC27L2BIDR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2BIDR | TLC27L2BIDR |
TLC27L2BIDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2BIDRG4 | TLC27L2BIDRG4 |
TLC27L2BIP | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC27L2BIP | TLC27L2BIP |
TLC27L2BIPE4 | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC27L2BIPE4 | TLC27L2BIPE4 |