TPS51100 评估模块TPS51100EVM-001
|
TPS51100EVM-001 |
名称 |
TPS51100EVM-001 Evaluation Module |
状态 |
ACTIVE |
价格(US$) |
$49.00 |
TPS51100EVM-001 描述
The TPS51100EVM evaluation module (EVM) includes an LDO for DDRI and DDRII memory modules with the necessary termination and reference voltages for DDR Memory modules. The EVM is designed to use a 1.5-V to 3.4-V VDDQ voltage and a 4.75 V to 5.25 V controller core supply to generate the necessary ½ VDDQ termination voltage with ± 2-A of sink/source current capacity for dual data rate (DDR) memory modules. The TPS51100EVM allows the user to evaluate the TPS51100 using an external reference voltage or the VDDQ LDO supply voltage to test it with DDRI or DDRII voltage standards and the S3 and S5 sleep states. The TPS51100 is designed to provide proper termination voltage for DDR memory modules covering both states.
TPS51100EVM-001 特性
- High-speed LDO requires only 20-µF (2' 10-µF) VTT capacitance
- LDO output for DDR termination and buffered reference voltages
- ± 2-A sink/source termination voltage LDO regulator
- 10-mA termination reference voltage for DDR input reference
- User selectable VDDQ or externally referenced supply voltages
- Switches available for testing S3 and S5 sleep states
TPS51100EVM-001 应用技术支持与电子电路设计开发资源下载
- TI 德州仪器非隔离式开关 DC/DC 调节器选型与价格参考 . xls
TPS51100EVM-001 相关产品
器件型号 |
名称 |
产品系列 |
TPS51020 |
双路 DDR 可选同步降压控制器 |
非隔离式开关 DC/DC 调节器 |
TPS51100 |
3A 输出驱动/吸入电流 DDR 终端稳压器 |
线性稳压器 |
TPS51116 |
DDR1、DDR2、DDR3 转换开关和 LDO |
非隔离式开关 DC/DC 调节器 |