XD1001-BD Distributed Amplifier 18-50 GHz

M/A-COM Tech’s 18.0-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 17.0 dB with a noise figure of 5.0 dB across the band. The device also includes 30.0 dB gain control and a +15 dBm P1dB compression point. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. Thes chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave and wideband military applications.

技术特性 Features

Ultra Wide Band Driver Amplifier
Fiber Optic Modulator Driver
17.0 dB Small Signal Gain
5.0 dB Noise Figure
30 dB Gain Control
+15.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883 Method 2010
RoHS* Compliant and 260°C Reflow Compatible

订购信息 Ordering Information

XD1001-BD-000V “V” - vacuum release gel paks
XD1001-BD-EV1 evaluation module

应用技术支持与电子电路设计开发资源下载	版本信息	大小
XD1001-BD数据资料DataSheet下载：PDF	Rev.V2	2 页
XD1001-BD:S 参数		7K