MGFC41V3642 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET

The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high raliability.

技术特性 Features
  • Internally matched to 50ohm system
  • High output power
    P1dB = 14W (TIP.) @ f=3.6 - 4.2 Hz
  • High power gain
    GLP = 12.5 dB (TYP.) @ f=3.6 - 4.2 GHz
  • High power added efficiency
    Eadd = 40 % (TYP.) @ f=3.6 - 4.2 GHz
  • Low Distortion[Item-51]
    IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.
应用领域 APPLICATION
  • item 01 : 3.6 - 4.2 GHz band power amplifier
  • item 51 : 3.6 - 4.2 GHz band digital radio communication
订购信息 Ordering Information
  • MGFC41V3642
外观尺寸图 Outline Drawing

MGFC41V3642 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGFC41V3642 数据资料DataSheet下载:PDF Rev.V2 2 页