MGFC42V6472 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET

The MGFC42V6472 is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

技术特性 Features
  • Class A operation
  • Internally matched to 50 ohm system
  • High output power
    P1dB = 18W (TYP.) @ f=6.4 - 7.2 GHz
  • High power gain
    GLP =8.0 dB (TYP.) @ f=6.4 - 7.2 GHz
  • High power added efficiency
    ηadd= 30% (TYP.) @ f=6.4 - 7.2 GHz
  • Hermatically sraled metal ceramic package
  • Low Distortion[Item-51]
    IM3=-45 dBc(MIN.)@Po=31.0dBm S.C.L.
应用领域 APPLICATION
  • item 01 : 6.4 - 7.2 GHz band power amplifier
  • item 51 : digital radio communication
订购信息 Ordering Information
  • MGFC42V6472
外观尺寸图 Outline Drawing

MGFC42V6472 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGFC42V6472 数据资料DataSheet下载:PDF Rev.V2 2 页