MGFC45V5964A 5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET

The MGFC45V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

技术特性 Features
  • Internally matched to 50 ohm system
  • High output power
    P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz
  • High power gain
    GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz
  • High power added efficiency
    P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz
  • Low Distortion[Item-51]
    IM3=-45 dBc(TYP.)@Po=34.5dBm S.C.L.
应用领域 APPLICATION
  • 5.9 - 6.4 GHz band power amplifier
订购信息 Ordering Information
  • MGFC45V5964A
外观尺寸图 Outline Drawing

MGFC45V5964A 外观尺寸图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGFC45V5964A 数据资料DataSheet下载：PDF Rev.V2 2 页
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