MGFC47A7785 7.7 ～ 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET

The MGFC47A7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ～ 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

技术特性 Features
  • Class A operation
  • Internally matched to 50(ohm) system
  • High output power
    P1dB = 46.7dBm (TYP.) @ f=7.7～8.5GHz
  • High power gain
    GLP = 5.7 dB (TYP.) @ f=7.7～8.5GHz
  • High power added efficiency
    P.A.E. = 30 % (TYP.) @ f=7.7～8.5GHz
应用领域 APPLICATION

Solid-state power amplifier for satellite earth-station communication transmitter and VSAT

订购信息 Ordering Information
  • MGFC47A7785
外观尺寸图 Outline Drawing

MGFC47A7785 外观尺寸图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGFC47A7785 数据资料DataSheet下载：PDF Rev.V2 2 页
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