T1G6003028-FS 30W, 28V, DC-6GHz GaN RF 功率晶体管
The TriQuint T1G6003028-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven 0.25 um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
技术特性
- Frequency: DC to 6 GHz
- Output Power (P3dB): 30 W at 6 GHz
- Linear Gain: >14 dB at 6 GHz
- Operating Voltage: 28 V
- Low thermal resistance package
订购信息 Ordering Information
| T1G6003028-FS |
Packaged part: Flangeless |
EAR99 |
| T1G6003028-FS-EVB1 |
5.4-5.9 GHz Eval. Board |
EAR99 |
技术指标
| 频率(GHz) |
增益(dB) |
功率(dBm) |
NF/PAE |
Vd(V) |
IQ(mA) |
| DC - 6 |
14 |
45 |
- |
28 |
200 |
|
应用领域 APPLICATION
- Military Radar Systems
- Civilian Radar
- Communications Systems
- Professional and Military Radio
- Test Instrumentation
- Wideband and Narrowband Amplifiers
- Jammers
T1G6003028-FS 产品实物图
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