| 型号 | 描述 | 频率(GHz) | 功率(dBm) | 增益(dB) | NF/PAE | +V | IQ(mA) |
| TGA2921-SG | 4 W 802.11a 封装放大器 | 4.9-6 | 36 | 11 | - | 8 | 800 |
| TGA2922-SG | 2W 802.11a封装放大器 | 4.9-6 | 34 | 11 | - | 8 | 480 |
| TGA2923-SG | 10 W MMDS封装放大器 | 3.5 | 40 | 9 | - | 8 | 1200 |
| TGA2924-SG | 10 W MMDS封装放大器 | 1-4 | 40 | 12 | - | 8 | 1200 |
| TGA2925-SG | 5.6 W 3.5 GHz 封装 HPA | 2-4 | 37.5 | 12 | - | 8 | 750 |
| 型号 | 描述 | 频率(GHz) | 增益(dB) | 功率(dBm) | NF/PAE | Vd(V) | IQ(mA) |
| T1G6000528-Q3 | 7 W, 28 V, 20 MHz - 6 GHz GaN 射频功率晶体管 | DC - 6 | 10 | 39.5 | >50% | 28 | 50 |
| T1G6003028-FS | 30W, 28V, DC-6GHz GaN RF 功率晶体管 | DC - 6 | 14 | 45 | - | 28 | 200 |
| TGF2021-01 | X-波段分立功率pHEMT | DC - 12 | 11 | > 30 | 59% | 8 - 12 | 75 - 125 |
| TGF2021-02 | X-波段分立功率pHEMT | DC - 12 | 11 | > 33 | 59% | 8 - 12 | 150 - 250 |
| TGF2021-04 | X-波段分立功率pHEMT | DC - 12 | 11 | > 36 | 59% | 8 - 12 | 300 - 500 |
| TGF2021-04-SG | pHEMT宽带射频晶体管 | 20 MHz - 4GHz | 12 | 4W | - | - | - |
| TGF2021-08 | X-波段分立功率pHEMT | DC - 12 | 11 | > 39 | 59% | 8 - 12 | 600 - 1000 |
| TGF2021-08-SG | pHEMT宽带射频晶体管 | 20 MHz - 4GHz | 12V | 7W | - | - | - |
| TGF2021-12 | X-波段分立功率pHEMT | DC - 12 | 11 | > 42 | 58% | 8 - 12 | 900 - 1500 |
| TGF2022-06 | Ku-波段分立功率pHEMT | DC - 20 | 13 | > 28 | 58% | 8 - 12 | 45 - 75 |
| TGF2022-12 | Ku-波段分立功率pHEMT | DC - 20 | 13 | > 31 | 58% | 8 - 12 | 90 - 150 |
| TGF2022-24 | Ku-波段分立功率pHEMT | DC - 20 | 13 | > 34 | 58% | 8 - 12 | 180 - 300 |
| TGF2022-48 | Ku-波段分立功率pHEMT | DC - 20 | 13 | > 37 | 58% | 8 - 12 | 360 - 600 |
| TGF2022-60 | Ku-波段分立功率pHEMT | DC - 20 | 12 | > 38 | 57% | 8 - 12 | 448 - 752 |
| TGF2023-01 | 6 W用于SiC HEMT上的分立电源 GaN | DC - 18 | 15 | >38 | 55% | 28 - 40 | 125 |
| TGF2023-02 | 12 W用于SiC HEMT上的分立电源 GaN | DC - 18 | 15 | > 41 | 55% | 28 - 40 | 250 |
| TGF2023-05 | 25 W用于SiC HEMT上的分立电源 GaN | DC - 18 | 15 | > 44 | 55% | 28 - 40 | 500 |
| TGF2023-10 | SiC HEMT 50W分立功率 GaN | DC - 18 | 15 | > 47 | 55% | 28 - 40 | 1000 |
| TGF2023-20 | SiC HEMT 100W分立功率 GaN | DC - 18 | 15 | > 50 | 55% | 28 - 40 | 2000 |
| TGF4112 | 12mm HFET | DC - 8.0 | 14@2GHz | 37 | 55% | 8 | 750 |
| TGF4118 | 18mm HFET | DC - 6.0 | 13.5@2GHz | 38.5 | 53% | 8 | 1690 |
| TGF4124 | 24mm HFET | DC - 4.0 | 13@2GHz | 40 | 51% | 8 | 2170 |
| TGF4230-SCC | 1.2 mm HFET | DC - 12.0 | 10 | 28.5 | 55% | 8 | 96 |
| TGF4240-SCC | 2.4mm HFET | DC - 12.0 | 10 | 31.5 | 56% | 8 | 192 |
| TGF4250-SCC | 4.8 mm HFET | DC - 10.5 | 8.5 | 34 | 53% | 8 | 384 |
| TGF4260-SCC | 9.6mm HFET | DC - 10.5 | 9.5 | 37 | 52% | 8.5 | 768 |
| 型号 | 描述 | 频率(GHz) | 增益(dB) | P1dB (dBm) | OIP3 (dBm) | NF/PAE | Vdd (V) | Idd (mA) | 封装 |
| CLY2 | 大功率 封装 GaAs FET; +23.5 dBm | DC - 3 | 14.5 | 23.5 | - | 0.79 | 3 | 180 | MW6 |
| CLY5 | 大功率 封装 GaAs FET; +26.5 dBm | 0.4 - 2.5 | 11 | 27 | - | 1.7 | 3 | 350 | MW6 |
| TGF2960-SD | 0.5 W GaAs HFET | DC - 5 | 19 | 27 | 40 | 3.7 | 8 | 100 | SOT-89 |
| TGF2961-SD | 1 W GaAs HFET | DC - 4 | 18 | 30 | 44 | 3.3 | 8 | 200 | SOT- |
| 型号 | 描述 | 技术 | 频段 | 工作电压 | P1dB (W) | 增益(dB) | 效率(%) | 宽带评估板 |
| T1P2701012-SP | 10 W, 12 V, 500 MHz - 3 GHz pHEMT 射频功率晶体管 | pHEMT | 500MHz - 2.7GHz | 12V | 10 | 10 | 50 | T1P2701012-SP |
| T1P3002028-SP | 20 W, 28 V, 500 MHz - 2GHz 脉宽 pHEMT 射频功率晶体管 | pHEMT | 500MHz - 2.5GHz | 28V | 20 | 10 | 50 | T1P3002028-SP |
| T1G6003028-SP | 25W, 28V, 20 MHz - 6 GHz GaN 分立射频晶体管 | GaN | 20MHz - 6.0GHz | 28 | 25 | 8 | 50 | T1G6003028-SP |
| T1L2003028-SP | 30 W, 28 V, 500 MHz - 2 GHz LDMOS RF 功率晶体管 | LDMOS | 500MHz - 2.0GHz | 28V | 30 | 10 | 60 | T1L2003028-SPTF |
| T1P3003028-SP | 30 W, 28 V, 500 MHz - 2GHz 脉宽 pHEMT 射频功率晶体管 | pHEMT | 500MHz - 2.0GHz | 28V | 30 | 10 | 50 | T1P3003028-SP |
| T1P3005028-SP | 50 W, 28 V, 500 MHz - 2GHz 脉宽 pHEMT 射频功率晶体管 | pHEMT | 500MHz - 2.0GHz | 28V | 50 | 10 | 50 | T1P3005028-SP |
