TGF2023-02 12 W用于SiC HEMT上的分立电源 GaN
The TriQuint TGF2023-02 is a discrete 2.5 mm GaN on SiCHEMT which operates from DC to 18 GHz. The part is designed using TriQuint's proven 0.25 um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The device typically provides 41 dBm of saturated output power with power gain of 18dB at 3 GHz. The maximum power added efficiency is 58% which makes the TGF2023-02 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.
技术特性
- Frequency range: DC to 18 GHz
- 41 dBm nominal Psat at 3 GHz
- 58% maximum PAE
- 18 dB nominal power gain
- Bias: Vd = 28 to 32 V, Idq = 250 mA, Vg = -3.6 V typical
- Technology: 0.25 um Power GaN on SiC
- Chip dimensions: 0.82 x 0.92 x 0.10 mm
技术指标
| 频率(GHz) |
增益(dB) |
功率(dBm) |
NF/PAE |
Vd(V) |
IQ(mA) |
| DC - 18 |
15 |
> 41 |
55% |
28 - 40 |
250 |
|
应用领域 APPLICATION
- Broadband Wireless
- Military
- Space
订购信息 Ordering Information
机械图样Mechanical Drawing
 |
