H 桥 MOSFET
| 产品型号 | Qualified to AECQ10x | PPAP Capable | Type | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDSA +25ºC (A) | PDW +25ºC (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | CISS Typ (pF) | QG Typ@ VGS = 10V(nC) |
|---|
| DMHC10H170SFJ | Yes | Yes | 2 x P,2 x N | No | 100 | 20 | -2.3,2.9 | 2 | 250,160 | 300,200 | 1167,1239 | 9.7,17.5 |
| DMHC3025LSD | Yes | Yes | 2 x N,2 x P | No | 30 | 20 | 6,4.2 | 1.5 | 25,50 | 40,80 | 590,631 | 11.7,11.4 |
| DMHC3025LSDQ | Yes | Yes | 2 x P,2 x N | No | 30,-30 | 20 | -4.2,6 | 1.5 | 25,50 | 40,80 | 590,631 | 11.7,11.4 |
| DMHC4035LSD | Yes | Yes | 2 x N,2 x P | No | 40 | 20 | 4.5,3.7 | 1.5 | 45,65 | 58,100 | 574,587 | 12.5,11.1 |
| DMHC6070LSD | No | No | 2 x N,2 x P | No | 60 | 20 | 4.1,3.1 | 1.6 | 100,170 | 120,250 | 20 | 11.5,8.9 |
| ZXMHC10A07N8 | Yes | Yes | 2 x P,2 x N | No | 100 | 20 | 0.9,1.1 | 1.3 | 1000,700 | 900,1450 | | 2.9,3.5 |
| ZXMHC10A07T8 | Yes | Yes | 2 x P,2 x N | No | 100 | 20 | 1.3,1.4 | 1.3 | 1000,700 | 900,1450 | | 2.9,3.5 |
| ZXMHC3A01N8 | Yes | Yes | 2 x P,2 x N | No | 30 | 20 | 2.1,2.7 | 1.3 | 210,125 | 180,330 | | 3.9,5.2 |
| ZXMHC3A01T8 | Yes | Yes | 2 x P,2 x N | | 30 | 20 | 2.3,3.1 | 1.7 | 210,120 | 180,330 | | 3.9,5.2 |
| ZXMHC3F381N8 | Yes | Yes | 2 x P,2 x N | No | 30 | 20 | 4.1,5 | 1.3 | 55,33 | 60,80 | | 9,12.7 |
| ZXMHC6A07N8 | Yes | Yes | 2 x P,2 x N | No | 60 | 20 | 1.4,1.8 | 1.3 | 400,250 | 350,600 | | 3.2,5.1 |
| ZXMHC6A07T8 | Yes | Yes | 2 x P,2 x N | No | 60 | 20 | 1.5,1.8 | 1.7 | 425,300 | 450,630 | | 3.2,5.1 |
| ZXMHN6A07T8 | Yes | Yes | 4 x N | No | 60 | 20 | 1.8 | 1.7 | 300 | 450 | | 3.2 |
