ZXMHN6A07T8：H 桥 MOSFET
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Type | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDSA +25ºC (A) | PDW +25ºC (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | CISS Typ (pF) | QG Typ@ VGS = 10V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ZXMHN6A07T8 | ZXMHN6A07T8.pdf | ZXMHN6A07T8 | Yes | Yes | 4 x N | No | 60 | 20 | 1.8 | 1.7 | 300 | 450 | - | 3.2 |
Description
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Application
Motor control
订购型号
- ZXMHN6A07T8TA
SM-8
- ZXMHN6A07T8.pdf ZXMHN6A07T8
