A2T08VD020N: 728-960 MHz,2 W平均值,48 V Airfast LDMOS射频功率晶体管

特性
  • 增大负栅源电压范围,改善C类放大器运行
  • 片上匹配(50 Ohm隔直输入)
  • 集成静态电流温度补偿,具有启用/禁用功能
  • 集成的ESD保护
  • 符合RoHS规范
PQFN 8x8 Package Image
数据手册 (1)
名称/描述Modified Date
A2T08VD020N 728-960 MHz, 2 W Avg, 48 V Data Sheet (REV 0) PDF (476.6 kB) A2T08VD020N [English]15 Jan 2016
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins (REV B) PDF (44.4 kB) 98ASA10760D [English]21 Mar 2016
印刷电路板
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
A2T08VD020NT1Active7289604842.718.62 @ AVGW-CDMA19.1 @ 96021.13.7InputABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
PWR QFN 24 8*8*2.1P0.898ASA10760DMPQ - 1000 REELPOQ - 1000 BOXActiveA2T08VD020NT1A2T08VD020NT1.pdf3260
A2T08VD020N 728-960 MHz, 2 W Avg, 48 V Data Sheet A2T08VD020N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
A2T08VD020N 900 MHz PCB DXF file A2T08VD020N
A2T08VD020N 700 MHz PCB DXF file A2T08VD020N
98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins MMRF2006N
A2T08VD020NT1.pdf A2T08VD020N