AFT09S200W02N: 716-960 MHz，56 W平均值，28 V Airfast LDMOS射频功率晶体管 _ BDTIC 中国领先电子元器件代理商

AFT09S200W02N: 716-960 MHz，56 W平均值，28 V Airfast LDMOS射频功率晶体管

特性

专为宽瞬时带宽应用而设计
增大负栅源电压范围，改善C类放大器运行
可承受极高的输出VSWR和宽带运行条件
为Doherty应用进行了优化
符合RoHS规范
采用盘卷包装。R3后缀 = 250个，32 mm卷带宽度，13英寸卷盘。

OM-780-2L, OM-780G-2L Package Images

数据手册 (1)

名称/描述	Modified Date
AFT09S200W02NR3, AFT09S200W02GNR3 716-960 MHz, 56 W AVG., 28 V Airfast® RF Power LDMOS Transistors -... (REV 0) PDF (877.5 kB) AFT09S200W02N [English]	15 Apr 2014

应用说明 (3)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]	12 Mar 2009

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins (REV C) PDF (68.6 kB) 98ASA10831D [English]	22 Mar 2016
98ASA00442D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 3 Pins (REV A) PDF (76.9 kB) 98ASA00442D [English]	15 Feb 2016

印刷电路板

AFT09S200W02N 900 MHz PCB DXF file (REV 0) ZIP AFT09S200W02N_900_PCB 4/15/2014

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
AFT09S200W02GNR3	Active		716	960	28	53	200	56 @ AVG	W-CDMA	19.2 @ 960	36.5	0.35	I/O	AB	LDMOS
AFT09S200W02NR3	Active		716	960	28	53	200	56 @ AVG	W-CDMA	19.2 @ 960	36.5	0.35	I/O	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	MSL	PPT (°C)
OM780-2 Gull Cu	98ASA00442D	MPQ - 250 REELPOQ - 250 REEL	Active	AFT09S200W02GNR3	AFT09S200W02GNR3.pdf		3	260
OM780-2 Straight Cu	98ASA10831D	MPQ - 250 REELPOQ - 250 REEL	Active	AFT09S200W02NR3	AFT09S200W02NR3.pdf		3	260

AFT09S200W02NR3, AFT09S200W02GNR3 716-960 MHz, 56 W AVG., 28 V Airfast® RF Power LDMOS Transistors -... AFT09S200W02N

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Products Selector Guide MMT20303H

AFT09S200W02N 900 MHz PCB DXF file AFT09S200W02N

98ASA00442D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 3 Pins MHT1004N

AFT09S200W02GNR3.pdf AFT09S200W02N

98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins MMRF1017N

AFT09S200W02NR3.pdf AFT09S200W02N

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