AFT21S232S: 2110-2170 MHz,50 W平均值,28 V Airfast LDMOS射频功率晶体管

特性
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 为Doherty应用进行了优化
  • 符合RoHS规范
  • NI-780S-2:R3后缀 = 250个,56 mm卷带宽度,13英寸卷盘。
NI-780S-2 Package Image
数据手册 (1)
名称/描述Modified Date
AFT21S230SR3, AFT21S230-12SR3, AFT21S232SR3 2110-2170 MHz, 50 W AVG., 28 V Airfast® RF Power LDMOS... (REV 3) PDF (550.7 kB) AFT21S230S_232S [English]31 Mar 2014
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C [English]22 Mar 2016
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
AFT21S232SR3Active211021702852.618250 @ AVGW-CDMA16.7 @ 211030.50.43I/OABLDMOS
AFT21S232SR5Active211021702852.618250 @ AVGW-CDMA16.7 @ 211030.50.43I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-780S98ASB16718CMPQ - 250 REELPOQ - 250 REELActiveAFT21S232SR3AFT21S232SR3.pdf260
MPQ - 50 REELPOQ - 50 REELActiveAFT21S232SR5AFT21S232SR5.pdf260
AFT21S230SR3, AFT21S230-12SR3, AFT21S232SR3 2110-2170 MHz, 50 W AVG., 28 V Airfast® RF Power LDMOS... AFT21S232S
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
AFT21S232SR3.pdf AFT21S232S
AFT21S232SR5.pdf AFT21S232S