MRF8S21200H: 2110-2170 MHz，48 W平均值，28 V W-CDMA，LTE射频功率LDMOS _ BDTIC 中国领先电子元器件代理商

MRF8S21200H: 2110-2170 MHz，48 W平均值，28 V W-CDMA，LTE射频功率LDMOS

特性

典型单载波W-CDMA性能：VDD = 28 V，IDQ = 1400 mA，平均输出功率 = 48 W，IQ幅度削峰，信道带宽 = 3.84 MHz，输入信号PAR = 7.5 dB @ 0.01% CCDF。频率 Gps(dB) ηD(%) 输出PAR(dB) ACPR(dBc) 2110 MHz17.832.66.4–37.7 2140 MHz18.132.66.3–37.1 2170 MHz18.132.96.2–36.2
在32 Vdc，2140 MHz，250 W连续波输出功率(自额定输出功率3 dB输入过驱)时，能承受10:1 VSWR
100%经过PAR测试，可保证输出功率容量
提供串联等效大信号阻抗参数和共源S参数
内部匹配，简便易用
集成的ESD保护
增大负栅源电压范围，改善C类放大器运行
专为数字预失真纠错系统而设计
符合RoHS规范
采用盘卷包装。R6后缀 = 150个，56 mm卷带宽度，13英寸卷盘。

NI-1230H-4S, NI-1230S-4S Product Images

数据手册 (1)

名称/描述	Modified Date
MRF8S21200HR6, MRF8S21200HSR6 2110-2170 MHz, 48 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs (REV 2) PDF (594.5 kB) MRF8S21200H [English]	07 Oct 2010

应用说明 (1)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C [English]	05 Apr 2016
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C [English]	23 Feb 2016

订购信息

型号	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF8S21200HSR6	Active	2110	2170	28	52.5	178	48 @ AVG	W-CDMA	18.1 @ 2140	32.6	0.31	I/O	AB	LDMOS
MRF8S21200HR6	No Longer Manufactured	2110	2170	28	52.5	178	48 @ AVG	W-CDMA	18.1 @ 2140	32.6	0.31	I/O	AB	LDMOS
MRF8S21200HSR5	No Longer Manufactured	2110	2170	28	52.5	178	48 @ AVG	W-CDMA	18.1 @ 2140	32.6	0.31	I/O	AB	LDMOS
MRF8S21200HR5	No Longer Manufactured	2110	2170	28	52.5	178	48 @ AVG	W-CDMA	18.1 @ 2140	32.6	0.31	I/O	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	PPT (°C)
NI-1230S	98ARB18247C	MPQ - 150 REELPOQ - 150 REEL	Active	MRF8S21200HSR6	MRF8S21200HSR6.pdf		260
NI-1230S	98ARB18247C		Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF8S21200HSR5	MRF8S21200HSR5.pdf		260
NI-1230	98ASB16977C	MPQ - 150 REELPOQ - 150 REEL	No Longer Manufactured	MRF8S21200HR6	MRF8S21200HR6.pdf		260
NI-1230	98ASB16977C		Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF8S21200HR5	MRF8S21200HR5.pdf		260

MRF8S21200HR6, MRF8S21200HSR6 2110-2170 MHz, 48 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs mrf8s21200h

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Products Selector Guide MMT20303H

98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H

MRF8S21200HSR6.pdf MRF8S21200H

MRF8S21200HSR5.pdf MRF8S21200H

98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H

MRF8S21200HR6.pdf MRF8S21200H

MRF8S21200HR5.pdf MRF8S21200H

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