MWE6IC9100N: 960 MHz，100 W，26 V GSM/GSM EDGE LDMOS宽带射频集成功率放大器

MWE6IC9100NR1和MWE6IC9100NBR1宽带集成电路具有片上匹配功能，适用于869至960 MHz的频率范围。这个多级结构的额定电压为26至32 V，涵盖所有典型的蜂窝基站调制模式。

典型GSM性能：VDD = 26 V，IDQ1 = 120 mA，IDQ2 = 950 mA，连续波输出功率 = 100 W，f = 960 MHz 功率增益：33.5 dB 功率附加效率：54%
典型GSM EDGE性能：VDD = 28 V，IDQ1 = 230 mA，IDQ2 = 870 mA，平均输出功率 = 50 W，全频段(869–960 MHz) 功率增益：35.5 dB 功率附加效率：39% 400 kHz偏移时，频谱增生 = –63 dBc 600 kHz偏移时，频谱增生 = –81 dBc EVM：2% rms
在32 Vdc，960 MHz，3 dB过驱时，能承受10:1 VSWR，旨在增强耐用性
在5:1 VSWR下保持稳定。在1 mW至120 W连续波输出功率时，所有杂散低于-60 dBc。
提供串联等效大信号阻抗参数和共源S参数
片上匹配(50 Ohm隔直输入)
集成静态电流温度补偿，具有启用/禁用功能
集成的ESD保护
可耐225°C高温的塑料封装
符合RoHS规范
采用盘卷包装。R1后缀 = 500个，44 mm卷带宽度，13英寸卷盘。

名称/描述	Modified Date
MWE6IC9100NR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier (REV 4.1) PDF (1.1 MB) MWE6IC9100N-1 [English]	31 Oct 2011
MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier (REV 6) PDF (1.1 MB) MWE6IC9100N-2 [English]	31 Oct 2011

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]	12 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN3263 [English]	07 Jun 2006
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 [English]	12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English]	09 Oct 2003

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

名称/描述	Modified Date
Advances in Airfast® RFICs White Paper (REV 0) PDF (149.2 kB) AIRFASTWBFWP [English]	15 May 2015

名称/描述	Modified Date
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins (REV B) PDF (72.7 kB) 98ASA10650D [English]	18 Mar 2016
98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins (REV B) PDF (71.4 kB) 98ASA10649D [English]	26 Feb 2016

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MWE6IC9100NBR1	Active		865	960	26	50.5	112	100 @ CW	CW	33.5 @ 960	54	0.38	Input	AB	LDMOS
MWE6IC9100NR1	No Longer Manufactured		865	960	26	50.5	112	100 @ CW	CW	33.5 @ 960	54	0.38	Input	AB	LDMOS

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	MSL	PPT (°C)
TO-272 WB-14 LEAD	98ASA10649D	MPQ - 500 REELPOQ - 500 BOX	Active	MWE6IC9100NBR1	MWE6IC9100NBR1.pdf		3	260
TO-270 WB-14 LEAD	98ASA10650D	MPQ - 500 REELPOQ - 500 BOX	No Longer Manufactured	MWE6IC9100NR1	MWE6IC9100NR1.pdf		3	260