MRF8S18120H: 1805-1880 MHz,72 W连续波,28 V GSM,GSM EDGE横向N信道射频功率MOSFET

特性
  • 典型GSM性能:VDD = 28 V,IDQ = 800 mA,连续波输出功率 = 72 W 频率 Gps(dB) ηD(%) 1805 MHz18.249.8 1840 MHz18.651.4 1880 MHz18.753.9
  • 在32 Vdc,1840 MHz,150 W连续波输出功率(3 dB过驱额定输出功率)时,能承受7:1 VSWR
  • 1 dB压缩点时,典型连续波输出功率 ≃ 120 W
  • 典型GSM EDGE性能:VDD = 28 V,IDQ = 800 mA,平均输出功率 = 46 W 频率 Gps(dB) ηD(%) SR1@ 400 kHz(dBc) SR2@ 600 kHz(dBc) EVM(% rms) 1805 MHz17.941.0–64–761.6 1840 MHz18.241.9–63–761.7 1880 MHz18.343.2–61–762.0
  • 提供串联等效大信号阻抗参数和共源S参数
  • 内部匹配,简便易用
  • 集成的ESD保护
  • 增大负栅源电压范围,改善C类放大器运行
  • 为Doherty应用进行了优化
  • 符合RoHS规范
  • 采用盘卷包装。R3后缀 = 250个,56 mm卷带宽度,13英寸卷盘。
NI-780, NI-780S Package Image
数据手册 (1)
名称/描述Modified Date
MRF8S18120HR3, MRF8S18120HSR3 1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs (REV 1) PDF (419.2 kB) MRF8S18120H [English]07 Oct 2010
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C [English]22 Mar 2016
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C [English]22 Mar 2016
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF8S18120HSR3Active180518802850.812072 @ CW1-Tone18.2 @ 180549.80.47I/OABLDMOS
MRF8S18120HR3No Longer Manufactured180518802850.812072 @ CW1-Tone18.2 @ 180549.80.47I/OABLDMOS
MRF8S18120HSR5No Longer Manufactured180518802850.812072 @ CW1-Tone18.2 @ 180549.80.47I/OABLDMOS
MRF8S18120HR5No Longer Manufactured180518802850.812072 @ CW1-Tone18.2 @ 180549.80.47I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-780S98ASB16718CMPQ - 250 REELPOQ - 250 REELActiveMRF8S18120HSR3MRF8S18120HSR3.pdf
MPQ - 50 REELPOQ - 50 BOXMigration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8S18120HSR5MRF8S18120HSR5.pdf
NI-78098ASB15607CMPQ - 250 REELPOQ - 250 REELNo Longer ManufacturedMRF8S18120HR3MRF8S18120HR3.pdf
No Longer ManufacturedMRF8S18120HR5MRF8S18120HR5.pdf
MRF8S18120HR3, MRF8S18120HSR3 1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs MRF8S18120H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
MRF8S18120HSR3.pdf MRF8S18120H
MRF8S18120HSR5.pdf MRF8S18120H
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H
MRF8S18120HR3.pdf MRF8S18120H
MRF8S18120HR5.pdf MRF8S18120H