MRF8S7120N: 728-768 MHz，32 W平均值，28 V单载波W-CDMA射频功率LDMOS
特性
| OM-780-2 Package Image |
数据手册 (1)
| 名称/描述 | Modified Date |
|---|---|
| MRF8S7120NR3 728-768 MHz, 32 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET (REV 0) PDF (441.5 kB) MRF8S7120N [English] | 26 May 2010 |
应用说明 (3)
| 名称/描述 | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English] | 29 Apr 2014 |
| AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English] | 13 May 2009 |
| Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English] | 12 Mar 2009 |
工程设计要点 (1)
| 名称/描述 | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English] | 19 Jan 2004 |
选型工具指南 (1)
| 名称/描述 | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English] | 26 May 2016 |
封装信息 (1)
| 名称/描述 | Modified Date |
|---|---|
| 98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins (REV C) PDF (68.6 kB) 98ASA10831D [English] | 22 Mar 2016 |
订购信息
| 型号 | 状态 | 状态 | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | 供电电压 (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | 输出功率 (Typ) (W) @ Intermodulation Level at Test Signal | 测试信号 | 功率增益 (Typ) (dB) @ f (MHz) | 效率 (Typ) (%) | 热阻 (Spec)(°C/W) | 匹配 | 类型 | 模具技术 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF8S7120NR3 | Active | 728 | 768 | 28 | 51 | 125 | 32 @ AVG | W-CDMA | 19.2 @ 768 | 38.1 | 0.65 | I/O | AB | LDMOS |
封装环保信息
| 封装说明 | Outline Version | 包装 | 产品状态 | 部件编号 | 化学成分 | RoHS / Pb Free中国RoHS查询 | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| OM780-2 Cu Plastic | 98ASA10831D | MPQ - 250 REELPOQ - 250 REEL | Active | MRF8S7120NR3 | MRF8S7120NR3.pdf |   | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
- Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins MMRF1017N
- MRF8S7120NR3.pdf MRF8S7120N
