抗辐射功率MOSFET

Part NumberGeneral DescriptionDrain Current (Dc)VDSSRDS(on)Transistor PolarityAgency QualificationEPPLRadiation LevelAgency Generic SpecTemperature rangeHi-Rel PackageQg
STRH40P10Rad-Hard P-Channel 100 V - 40A MOSFET-34-1000.075P-ChannelESCCtrue100 krad (Si) - SEE Hardened5205/025-55 to 150 CTO-254AA200
STRH100N6Rad-Hard N-Channel 60V, 40A MOSFET806013.5N-ChannelESCC50 krad (Si) - SEE Hardened5205/022-55 to 150 CTO-254AA161
STRH8N10Rad-Hard N-Channel 100V - 6A MOSFET81000.3N-ChannelESCC50 krad (Si) - SEE hardened5205/023-55 to 150 CSMD.522
STRH40N6Rad-Hard N-Channel 60V - 35A MOSFET306045N-ChannelESCC50 krad (Si) - SEE Hardened5205/024-55 to 150 CSMD.552
STRH100N10Rad-Hard N-Channel 100V - 48A MOSFET481000.035N-ChannelESCCtrue50 krad (Si) - SEE Hardened5205/021-55 to 150 CTO-254AA162
STRH12P10Rad-Hard P-channel 100 V, 12 A Power MOSFET-12-1000.3P-ChannelESCC100 krad(Si) - SEE characterized5205/029-55 to 150 CTO-257AA40