STRH100N10:Rad-Hard N-Channel 100V - 48A MOSFET

This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET™ process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects. This Power MOSFET is fully ESCC qualified.

Key Features

  • Fast switching
  • 100% avalanche tested
  • Hermetic package
  • 50 krad TID
  • SEE radiation hardened
产品规格
DescriptionVersionSize
DS6829: Rad-Hard 100 V, 48 A N-channel Power MOSFET10.0520 KB
Technical Notes & Articles
DescriptionVersionSize
TN1188: Chip storage and handling for aerospace products with silver backside2.0331 KB
TN1181: Engineering Model quality level1.1142 KB
HW Model & CAD Libraries
DescriptionVersionSize
STRH100N10 beginning of life PSpice model (.lib)2.1972 bytes
选型指南
DescriptionVersionSize
Aerospace and Hi-rel - ESCC, JANS & QML products1.02 MB
样片和购买
型号SMD PIN/Detailed SpecQuality LevelEPPLHi-Rel PackageLead FinishPacking TypePackage: Product MarkingMass (gr)ECCN (EU)ECCN (US)Country of Origin
STRH100N10HY1-Engineering Model-TO-254AAGoldCarrier TapeSTRH100N10HY1+ BeO10NECEAR99FRANCE
STRH100N10HYT5205/021/02ESCC Flight-TO-254AASolder DipCarrier Tape520502102F + BeO10NECEAR99FRANCE
STRH100N10HYG5205/021/01ESCC FlighttrueTO-254AAGoldCarrier Tape520502101F + BeO10NECEAR99FRANCE
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STRH100N10HY1TO-254AAIndustrialN/A
STRH100N10HYTTO254 AA FPIndustrialN/A
STRH100N10HYGTO254 AA FPIndustrialN/A
Rad-Hard 100 V, 48 A N-channel Power MOSFET STRH100N10
Chip storage and handling for aerospace products with silver backside STRH12P10
Engineering Model quality level 1N5822U
Engineering Model quality level STRH100N10
Engineering Model quality level 1N5822U