STRH100N10:Rad-Hard N-Channel 100V - 48A MOSFET
This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET™ process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects. This Power MOSFET is fully ESCC qualified.
Key Features
- Fast switching
- 100% avalanche tested
- Hermetic package
- 50 krad TID
- SEE radiation hardened
产品规格
Technical Notes & Articles
HW Model & CAD Libraries
选型指南
样片和购买
型号 | SMD PIN/Detailed Spec | Quality Level | EPPL | Hi-Rel Package | Lead Finish | Packing Type | Package: Product Marking | Mass (gr) | ECCN (EU) | ECCN (US) | Country of Origin |
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STRH100N10HY1 | - | Engineering Model | - | TO-254AA | Gold | Carrier Tape | STRH100N10HY1+ BeO | 10 | NEC | EAR99 | FRANCE |
STRH100N10HYT | 5205/021/02 | ESCC Flight | - | TO-254AA | Solder Dip | Carrier Tape | 520502102F + BeO | 10 | NEC | EAR99 | FRANCE |
STRH100N10HYG | 5205/021/01 | ESCC Flight | true | TO-254AA | Gold | Carrier Tape | 520502101F + BeO | 10 | NEC | EAR99 | FRANCE |
质量和可靠性
型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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STRH100N10HY1 | TO-254AA | Industrial | N/A | |
STRH100N10HYT | TO254 AA FP | Industrial | N/A | |
STRH100N10HYG | TO254 AA FP | Industrial | N/A | |