STH160N4LF6-2:N-channel 40 V, 2.7 mOhm typ., 160 A STripFET F6 Power MOSFET in H2PAK-2 package
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Key Features
- RDS(on)
* Qg
industry benchmark
- Extremely low on-resistance RDS(on)
- Logic level drive
- High avalanche ruggedness
- 100% avalanche tested
产品规格
应用手册
用户手册
HW Model & CAD Libraries
手册
Software Development Tools
型号 | 制造商 | Description |
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ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
---|
STH160N4LF6-2 | H2PAK-2 | Tape And Reel | - | - | NEC | EAR99 | CHINA |
质量和可靠性
型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|
STH160N4LF6-2 | H2PAK-2 | Industrial | Ecopack1 | |