DS1230W:3.3V 256k Nonvolatile SRAM

The DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230W devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230W devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM Module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Key Features
  • 10 years minimum data retention in the absence of external power
  • Data is automatically protected during power loss
  • Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
  • Unlimited write cycles
  • Low-power CMOS
  • Read and write access times of 100ns
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
  • Optional industrial temperature range of -40°C to +85°C, designated IND
  • JEDEC standard 28-pin DIP package
  • PowerCap Module (PCM) package
    • Directly surface-mountable module
    • Replaceable snap-on PowerCap provides lithium backup battery
    • Standardized pinout for all nonvolatile SRAM products
    • Detachment feature on PowerCap allows easy removal using a regular screwdriver
DS1230W: Pin Assignment
DS1230W: Pin Assignment
DataSheet
titleDownload file
DS1230W Data SheetDS1230W.pdf
Parametrics
Part NumberMemory TypeMemory SizeBus TypeVSUPPLY
(V)
VSUPPLY
(V)
Package/PinsBudgetary
Price
minmaxSee Notes
DS1230WNV SRAM32K x 8Parallel33.6EDIP/28
PCAP/34
$13.58 @1k
Quality and Environmental Data
Ordering Information
Part NumberNotesStatusRecommended ReplacementPackageTempRoHS
DS1230W-1003.3Vm, 100nsNo Longer AvailableDS1230W-100+EDIP,;28 pin;629.9 mm²0°C to +70°CSee data sheet
DS1230W-100+ActiveEDIP,;28 pin;629.9 mm²0°C to +70°CLead Free
DS1230W-100IND3.3Vm, 100nsNo Longer AvailableDS1230W-100IND+EDIP,;28 pin;629.9 mm²-40°C to +85°CSee data sheet
DS1230W-100IND+ActiveEDIP,;28 pin;629.9 mm²-40°C to +85°CLead Free
DS1230W-1503.3Vm, 150nsNo Longer AvailableDS1230W-100+EDIP,;28 pin;629.9 mm²0°C to +70°CSee data sheet
DS1230W-150+ActiveEDIP,;28 pin;629.9 mm²0°C to +70°CLead Free
DS1230W-C03No Longer AvailableDS1230W-100+EDIP,;28 pin;629.9 mm²0°C to +70°CSee data sheet
DS1230WP-1003.3Vm, 100nsNo Longer AvailableDS1230WP-100+PCAP,;34 pin;596.9 mm²0°C to +70°CSee data sheet
DS1230WP-100+ActivePCAP,;34 pin;596.9 mm²0°C to +70°CLead Free
DS1230WP-100IND3.3Vm, 100nsNo Longer AvailableDS1230WP-100IND+PCAP,;34 pin;596.9 mm²-40°C to +85°CSee data sheet
Part NumberNotesStatusRecommended ReplacementPackageTempRoHS
DS1230WP-100IND+ActivePCAP,;34 pin;596.9 mm²-40°C to +85°CLead Free
DS1230WP-1503.3Vm, 150nsNo Longer AvailableDS1230WP-100+PCAP,;34 pin;596.9 mm²0°C to +70°CSee data sheet
DS1230WP-150+ActivePCAP,;34 pin;596.9 mm²0°C to +70°CLead Free
DS1230W.pdf DS1230W
DS1230W.pdf DS1230W
DS1230W.pdf DS1230W
Low-Temperature Data Retention in Nonvolatile SRAM DS1270Y
NV SRAM Device Programmers DS1250Y
Timing Considerations When Using NVSRAM DS1350Y
Tech. Brief 39: NV SRAM Cross Reference Table DS1270Y
NV SRAM Frequently Asked Questions DS1350Y
DS1230W.pdf DS1230W
DS1230W.pdf DS1230W