LP311 具有集电极开路输出和发射器输出的单路、低功耗、选通差动比较器
The LP211 and LP311 devices are low-power versions of the industry-standard LM211 and LM311 devices. They take advantage of stable, high-value, ion-implanted resistors to perform the same function as the LM311 series, with a 30:1 reduction in power consumption but only a 6:1 slowdown in response time. They are well suited for battery-powered applications and all other applications where fast response times are not needed. They operate over a wide range of supply voltages, from ±18 V down to a single 3-V supply with less than 300-µA current drain, but are still capable of driving a 25-mA load. The LP211 and LP311 are quite easy to apply free of oscillation if ordinary precautions are taken to minimize stray coupling from the output to either input or to the trim pins.
|
LP311 |
| Number of Channels |
1 |
| Iq per channel (Max) (mA) |
0.3 |
| Output Current (Min) (mA) |
25 |
| tRESP Low - to - High (us) |
1.2 |
| Output Type |
Open Collector, Open Drain |
| VIO (25 deg C) (Max) (mV) |
7.5 |
| Pin/Package |
8SOIC |
| VICR (Min) (V) |
-14.5 |
| VICR (Max) (V) |
13.5 |
| Vs (Min) (V) |
3.5 |
| Vs (Max) (V) |
30 |
| Operating Temperature Range (C) |
0 to 70 |
| Rating |
Catalog |
LP311 特性
- Low Power Drain . . . 900 µW Typical With 5-V Supply
- Operates From ±15 V or From a Single Supply as Low as 3 V
- Output Drive Capability of 25 mA
- Emitter Output Can Swing Below Negative Supply
- Response Time . . . 1.2 µs Typ
- Low Input Currents:
Offset Current ...2 nA Typ
Bias Current . . . 15 nA Typ
- Wide Common-Mode Input Range:
- –14.5 V to 13.5 V Using ±15-V Supply
- Same Pinout as LM211, LM311
- Designed To Be Interchangeable With Industry Standard LP311
LP311 芯片订购指南
| 器件 |
状态 |
温度 |
价格 |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
| LP311D |
ACTIVE |
0 to 70 |
0.80 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
|
| LP311DE4 |
ACTIVE |
0 to 70 |
0.80 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
|
| LP311DG4 |
ACTIVE |
0 to 70 |
0.80 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
|
| LP311DR |
ACTIVE |
0 to 70 |
0.70 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
|
| LP311DRE4 |
ACTIVE |
0 to 70 |
0.70 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
|
| LP311DRG4 |
ACTIVE |
0 to 70 |
0.70 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
|
| LP311P |
ACTIVE |
0 to 70 |
0.75 | 1ku |
PDIP (P) | 8 |
50 | TUBE |
|
| LP311PE4 |
ACTIVE |
0 to 70 |
0.75 | 1ku |
PDIP (P) | 8 |
50 | TUBE |
|
LP311 质量与无铅数据
| 器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
| LP311D |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
LP311D |
LP311D |
| LP311DE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
LP311DE4 |
LP311DE4 |
| LP311DG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
LP311DG4 |
LP311DG4 |
| LP311DR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
LP311DR |
LP311DR |
| LP311DRE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
LP311DRE4 |
LP311DRE4 |
| LP311DRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
LP311DRG4 |
LP311DRG4 |
| LP311P |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
LP311P |
LP311P |
| LP311PE4 |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
LP311PE4 |
LP311PE4 |
LP311 应用技术支持与电子电路设计开发资源下载
- LP311 数据资料 dataSheet 下载.PDF
- TI 德州仪器仪Comparator 比较器产品选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 高速数据转换 (PDF 1967 KB)
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- Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
- Operational Amplifier Macromodels: A Comparison (PDF 59 KB)
